transistor bc558 pinout

 BC558 NPN Transistor pinout and Datasheet:


Pinout:

Collector (C)

Base (B)

Emitter (E)

<img src="image_transistor BC558 pinout.jpg" alt="Transistor BC558 Pinout">

BC558 NPN Transistor Datasheet

General Description: 

The BC558 is a widely used NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It belongs to the BC54x series of transistors and is commonly used in low-power amplifier circuits, signal amplification, and as a switch in various electronic devices.


Features:


NPN transistor with three-layer construction.


Low current (IC) and voltage (VCE) ratings.


High current gain (hFE).


Low saturation voltage.


RoHS compliant.


Electrical Characteristics (TA = 25°C unless otherwise specified):


1 Absolute Maximum Ratings:


Collector-Base Voltage (VCBO): 30 V


Collector-Emitter Voltage (VCEO): 30 V


Emitter-Base Voltage (VEBO): 5 V


Collector Current (IC): 100 mA


Total Device Dissipation (PD): 500 mW


Operating and Storage Junction Temperature Range (TJ, TSTG): -55°C to +150°C


2 Electrical Characteristics (TA = 25°C unless otherwise specified):


DC Current Gain (hFE): 100 - 800


Collector-Emitter Saturation Voltage (VCE(sat)): 0.25 V (IC = 10 mA, IB = 1 mA)


Base-Emitter Saturation Voltage (VBE(sat)): 0.7 V (IC = 10 mA, IB = 1 mA)


Collector Cut-off Current (ICBO): 10 nA (VCE = 30 V, IB = 0)


Emitter Cut-off Current (IEBO): 10 nA (VEB = 5 V, IC = 0)


Transition Frequency (fT): 100 MHz (IC = 10 mA, VCE = 20 V, f = 100 MHz)


Package Type:


TO-92 (Plastic Package)


 Typical Applications:


1 Small signal amplification.


2 Low-power audio amplification.


3 Signal switching and buffering.


4 Oscillator circuits.


5 Driver stages for transistors, relays, and other semiconductor devices.


Package Dimensions (TO-92):


Length (L): 15.5 mm (approx.)


Width (W): 4.5 mm (approx.)


Height (H): 4.5 mm (approx.)




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